| 摘要 |
Apparatus and methods are disclosed for reducing aberrations caused by space-charge effects in charged-particle-beam (CPB) microlithography. A representative CPB microlithography apparatus includes illumination-optical and projection-optical systems and a beam-correction-optical system. The beam-correction-optical system is connected to a control computer configured to compute correction data for correcting a space-charge-effect (SCE)-based aberration. The correction data are calculated from the distribution of pattern elements in the exposure region, the illumination-beam current, the spread-angle distribution of the illumination beam, the beam-accelerating voltage of the illumination beam, the axial distance between the reticle and substrate, and optical characteristics of the projection-optical system.
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