| 发明名称 |
Semiconductor structures with trench contacts |
| 摘要 |
Semiconductor structures such as the trench and planar MOSFETs (UMOS), trench and planar IGBTs and trench MCTs using trenches to establish a conductor. Improved control of the parasitic transistor in the trench MOSFET is also achieved and cell size and pitch is reduced relative to conventional structures.
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| 申请公布号 |
US6630711(B2) |
申请公布日期 |
2003.10.07 |
| 申请号 |
US20020187560 |
申请日期 |
2002.07.02 |
| 申请人 |
FAIRCHILD SEMICONDUCTOR CORPORATION |
发明人 |
HUANG QIN |
| 分类号 |
H01L21/331;H01L21/336;H01L29/417;H01L29/739;H01L29/78;(IPC1-7):H01L29/76 |
主分类号 |
H01L21/331 |
| 代理机构 |
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代理人 |
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