System for reducing silicon-consumption through selective deposition

摘要

Disclosed is a system for fabricating a semiconductor device (100). A layer of cobalt (32) is deposited onto a silicon region (104, 106, 108) and annealed to form a cobalt silicide layer (118, 120, 122). Silicon layers (124, 126, 128) are selectively deposited onto the cobalt silicide layers (118, 120, 122). The semiconductor device (100) is annealed to form disilicide layers (130, 132, 134) from the cobalt silicide layers (118, 120, 122) and the silicon contained in silicon regions (104, 106, 108) and silicon layers (124, 126, 128).