| 摘要 |
A semiconductor device has a blocking layer disposed between the substrate and the active layer. The blocking layer inhibits the propagation of anti-phase domain defects (APDs) into the active layer. This decreases the density of defects in the active layer, and improves the performance characteristics of the laser device.The blocking layer is disposed either wholly within one of the layers of the laser device, or at the interface between two layers of the laser device. The bandgap of the blocking layer is preferably substantially equal to the bandgap of the layer in which it is disposed, or to the bandgap of a layer to which it is adjacent. This prevents the formation of a potential, barrier, or a potential well in the laser structure, so that provision of the blocking layer does not affect the transport of carriers through the device.In one embodiment the device is a laser device and is fabricated in the (Al,Ga,In)P system.
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