| 摘要 |
Embodiments of the present invention provide a chemical-mechanical planarization method for planarizing a wafer. The method comprises polishing a surface of the wafer to be planarized, and optically measuring feature heights of features on the surface of the wafer to obtain measurement data during said polishing of the surface. In some embodiments, the feature heights are measured by directing incident light at the surface of the wafer and observing a reflected light intensity of light reflected from the surface. In specific embodiments, the method includes adjusting, in real time, parameters controlling said polishing of the surface in response to the measurement data. The parameters may include a spinning speed of the polishing pad used to polish the surface, an orbiting speed of the polishing pad, a rotational speed of the wafer, a position of the polishing pad, a force between the polishing pad and the object, or the like.
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