发明名称 |
Field oxide device with zener junction for electrostatic discharge (ESD) protection and other applications |
摘要 |
A field oxide device (FOD) useful for electrostatic discharge (ESD) protection and other applications. The FOD is characterized as being capable of achieving a relatively low breakdown voltage and capable of handling relatively high currents during an ESD event. In general, the FOD includes a zener junction to promote an earlier breakdown of the device. The zener junction also provides a planar-like breakdown region which makes it capable of handling relatively high currents. In particular, the FOD includes a p-doped substrate having a drain-side n+ diffusion region and a source-side n+ diffusion region which are separated by a field oxide. The FOD further includes a p+ doped region that interfaces with the drain-side n+ diffusion region to form a zener junction. The breakdown voltage of the FOD can be easily set by controlling the doping concentration and energy of the p+ doped region. The FOD may additionally include one or more n+ regions at the respective boundaries of the drain-side and source-side n+ diffusion regions to provide improved junction curvature. In addition to the field oxide interposed between the drain-side and source-side n+ diffusion regions, field oxides can be added respectively at the drain and source ends to provide isolation from other devices within an integrated circuit.
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申请公布号 |
US6631060(B2) |
申请公布日期 |
2003.10.07 |
申请号 |
US20000726923 |
申请日期 |
2000.11.30 |
申请人 |
WINBOND ELECTRONICS CORPORATION |
发明人 |
SU KUNG-YEN;LIU CHUN-MAI;CHAN KAIMAN |
分类号 |
H01L27/02;(IPC1-7):H02H9/00 |
主分类号 |
H01L27/02 |
代理机构 |
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