发明名称 SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To block a decrease in insulation resistance of a high dielectric layer between electrode layers and to enable leakage current from leaking out between electrode layers by making an electrode layer consist mainly of the same material as that of a high permittivity dative agent. CONSTITUTION:An alumina powder 82wt.%, a sinter assistant of total 8wt.% SiO2, CaO, MgO, and a high permittivity dative agent 10wt.% made of W, MO are mixed and added with binder and toluene to form into a sheet, so that a high dielectric layer 11 molding. Throughholes are formed in an insulation layer 13 formed by adding an alumina powder 92wt.%, a sinter assistant of total 8wt% SiO2, CaO, MgO, binder, and toluene to form into a sheet and in the high dielectric layer 11 molding; these are filled with a high melting point metal paste. Therefore, the top and bottom faces of the high dielectric layer 11 molding are coated with an electrode layer 15 paste containing 98wt.% of the same material as that of its high permittivity dative agent and 2wt.% of an additive, so that this paste can maintain a high permittivity by intervening between the insulation layers 13 moldings.</p>
申请公布号 JPH0685108(A) 申请公布日期 1994.03.25
申请号 JP19920230994 申请日期 1992.08.31
申请人 KYOCERA CORP 发明人 YOMO KUNIHIDE;KUBOTA TAKESHI;FURUSAWA AKIRA
分类号 H01L23/12;H01L23/15;H05K3/46;(IPC1-7):H01L23/15 主分类号 H01L23/12
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