| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride-based compound semiconductor light emitting element which can be manufactured without missing the crystallinity of a p- or n-type layer. SOLUTION: In the compound semiconductor light emitting element provided with a gallium nitride-based compound semiconductor which is formed by successively laminating the n-type layer and p-type layer upon a sapphire substrate in this order and etching the layers so that the electrode forming surface of the n-type layer may be exposed, the surface of the sapphire substrate on the same side as that of the electrode forming surface is exposed. |
