| 摘要 |
<p>PURPOSE:To provide a memory cell wherein data of at least a plurality of bits can be stored and to provide a memory device wherein a memory capacity can be increased by using the memory cell. CONSTITUTION:Every memory cell 8 is composed of every MOSFET 22, MOSFETs provided with four kinds of different ON resistance values are prepared, and MOSFETs provided with prescribed ON resistor values are formed in individual memory cells. Sources for the MOSFETs 22 arranged in the row direction of a memory cell array are connected to the same grounding potential line 6 and drains are connected to the same bit line 4. Gates for the MOSFETs 22 arranged in the column direction are connected to the same word line 2. A potential generated between the sources and the drains for the MOSFETs is converted into two-bit data by a data conversion device 10.</p> |
