发明名称 JOINTING MATERIAL FOR MOUNTING SEMICONDUCTOR DEVICE AND MOUNTING METHOD USING THE MATERIAL
摘要 PURPOSE:To achieve stable adhesion strength of a semiconductor device which enables easy transfer of a solder layer to a heat sink and realizes clean surface after transfer. CONSTITUTION:A jointing material A for semiconductor device mounting is formed by depositing a 2mum-thick indium 2 on a 50mum-thick ethylene tetrafluoride-ethylene copolymer (hereinafter called 'ETFE') film 10. The jointing material A is pressed to a heat sink 1 from the side of the ETFE film 10 while applying an acceleration of about 0.5m/sec<2> and a static pressure of 300g to a trowel 6. The indium 2 is transferred well in the shape of the bottom of the pressed trowel 6. Since the transfer is performed just by pressing, fluorine and carbon contained in the ETFE film 10 do not dissociate and do not attach to the surface of the indium. Transferred indium of a clean surface can be provided in this way.
申请公布号 JPH0661584(A) 申请公布日期 1994.03.04
申请号 JP19910017489 申请日期 1991.02.08
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 KAMIYAMA SATOSHI;TAKAHASHI YASUHITO;ONAKA SEIJI
分类号 H01L21/52;H01S5/00;H05K3/34;(IPC1-7):H01S3/18 主分类号 H01L21/52
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