FERROELECTRIC CAPACITOR, ITS MANUFACTURING METHOD, MEMORY CELL ARRAY, METHOD OF MANUFACTURING DIELECTRIC CAPACITOR, AND MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a method of manufacturing ferroelectric capacitor by which a uniform ferroelectric layer can be formed, and to provide a memory device using a ferroelectric capacitor.

SOLUTION: By the method of manufacturing ferroelectric capacitor, a ferroelectric capacitor C100 in which a first electrode 20, a ferroelectric layer 22, and a second electrode 24 are laminated upon, is manufactured. The method includes a step of forming an insulating layer having a recessed section in the forming area of the first electrode 20 on a substrate 100, a step of forming a metallic compound layer 30 so as to cover the upper surface of the insulating layer 40 and the side face and bottom face of the recessed section, and a step of forming the first electrode 20 so as to fill up the recessed section. The method also includes a step of forming the ferroelectric layer 22 on the first electrode 20 and the metallic compound layer 30, and a step of forming the second electrode 24 having a prescribed pattern on the ferroelectric layer 22.

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