| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide an electron beam exposure apparatus that can expose and transfer a pattern of finer line width, as compared with an electron beam exposure apparatus of conventional conception. <P>SOLUTION: Normally, intensity distribution of an electron beam is not of a rectangular distribution that faithfully corresponds to (a) because of diffraction phenomenon, but has a distribution containing a specified widening as in (b). As opposed to this, by using a reticle that is so formed that the phase of electrons passing through a periodical pattern on the reticle is alternately shifted by (n+1/2)λfor each unit pattern of the periodical pattern, the pattern of a distribution of the electron beam taking account of phase is, as shown in (c). Thereby, at a part where the electron beams overlap with each other corresponding to the lower slopes of adjacent patterns, both distributions cancel with each other and the intensity of the electron beams is weakened, so that, pattern will not be formed at a part where the pattern is absent. <P>COPYRIGHT: (C)2004,JPO</p> |
