MONITORING METHOD, EXPOSING METHOD, MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE, ETCHING METHOD, AND EXPOSURE PROCESSING DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a monitoring method capable of measuring a fine patterning size with high accuracy. SOLUTION: The monitoring method comprises a step wherein a monitoring resist pattern 13 which includes a slanting side wall 20 with at least one side thereof provided slantingly with respect to the surface of the ground film 2, is formed on a ground film 2, and there is measured the width of the monitoring resist pattern 13 directed perpendicularly to a direction where the slanting side wall 20 intersects the ground film; a step wherein the ground film 2 is selectively etched using the monitoring resist pattern 13 as a mask to form a monitoring ground film pattern 12, and there is measured width of the monitoring ground film pattern 12 directed perpendicularly to a direction where the slanting side wall 20 intersects the ground film; and a step wherein a displacement widthΔs is obtained on the basis of a difference between the width of the monitoring resist pattern 13 and the width of the ground film pattern 12. COPYRIGHT: (C)2004,JPO