| 摘要 |
PROBLEM TO BE SOLVED: To provide a method and device for exposure which enables superior focus correction in terms of the flatness of a wafer surface without causing reduction in throughput. SOLUTION: The method for exposing a pattern which is formed on a reticle to an object to be treated comprises a step for measuring and storing the flatness of the object to be treated, a step for measuring a plurality of positions in the object to be treated, and a step for controlling at least either the position or the inclination of the object to be treated on the basis of flatness information obtained in the flatness measuring step and positional information obtained in the position measuring step. COPYRIGHT: (C)2004,JPO |
