发明名称 SIMULATION METHOD, RECORDING MEDIUM, THIN-FILM FORMING METHOD AND SPUTTER FILM FORMING DEVICE
摘要 PROBLEM TO BE SOLVED: To restrict the number of times of film formation at a minimum, until film unevenness is eliminated by the simulation of a film thickness of a thin film with high accuracy. SOLUTION: First, a film is formed under normal conditions, without installing a film thickness correction guide rod 8 (step S1). Next, only a piece of film thickness correction guide rod 8 is installed in a guide rod fixing holder 8a, in parallel with a moving direction of a substrate W<SB>1</SB>, and a film is formed again under the same conditions, as when the film was formed without using the film thickness correction guide rod 8 (step S2). Next, the difference in film thickness between a thin film formed, without installing the film thickness correction guide rod 8 and a thin film formed by installing only a piece of the film thickness correction guide rod 8, i.e., the width of decrease in the film thickness is measured (step S3). Next, this decreased width is approximated (step S4). The reduced width is approximated by a function (step S4), and the number of the film thickness correction guide rods 8 which makes the unevenness of the film thickness minimal and the arrangement position are determined based on the approximate function found in step S4 (step S5). COPYRIGHT: (C)2004,JPO
申请公布号 JP2003282381(A) 申请公布日期 2003.10.03
申请号 JP20020080516 申请日期 2002.03.22
申请人 CANON INC 发明人 TAKAHASHI TSUKASA
分类号 G02B5/28;C23C14/34;H01L21/00;(IPC1-7):H01L21/00 主分类号 G02B5/28
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