| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To solve the problem that degree of integration of a memory cell group composed of cross points of word lines and bit lines becomes lower than a logically ideal one in a semiconductor memory constituted of cross points, because the areas occupied by transistors generally become larger than the allowable intervals between the bit lines and word lines when the semiconductor memory is constituted in the conventional functional block type. <P>SOLUTION: A memory cell group block constituted of cross points is controlled by means of laterally divided two work line control blocks, vertically divided two bit line control blocks, and a switch group block. In addition, the word lines are alternately distributed to the left and right work line control blocks one by one through a switch group and the bit lines are also alternately distributed to the upper and lower bit line control blocks one by one through the switch group. <P>COPYRIGHT: (C)2004,JPO</p> |
