| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which an address can be specified and redundant relieving of defective write-in can be performed when defective write-in is caused while performing batch write-in. <P>SOLUTION: This device is provided with a memory cell array 2 having matrix arrangement of nonvolatile memory cells MC11-MCmn, bit lines BLk (k=1, 2,...) connected to drains of the memory cells respectively, column latches LK provided one by one for each bit line, a transfer gate TG0 connecting and separating electrically the column latches and the bit lines, a means reversing data of the latches when a cell current of the memory cell selected at the time of write-in verifying is detected, and a means outputting data of the column latch. <P>COPYRIGHT: (C)2004,JPO</p> |
