| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a nonvolatile semiconductor memory device in which the Vt fluctuation of an unwritten transistor can be suppressed in continuous reading-out at a high temperature without increasing the irradiation time of ultraviolet ray in a manufacturing process. <P>SOLUTION: Interposing an interlayer insulation film 10 above a floating gate 9, without covering the floating gate 9, a barrier layer 15 is arranged around the floating gate including adjacent areas of a connecting part 9c of the floating gate 9. In the top view showing the surface of the semiconductor substrate, a spacing S between the end of the floating gate 9 and the end of the barrier layer 15 is set to be not more than 2μm. <P>COPYRIGHT: (C)2004,JPO</p> |
