| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To bring a position for implanting electrons at a writing time into coincidence with a position for implanting the electrons to holes at an erasing time in a MONOS nonvolatile memory device. <P>SOLUTION: A nonvolatile memory device comprises first and second control gates 304, 305 formed above a substrate 301 via a second gate insulating layer 306 made of an ONO film. In this device, the second gate insulating layer has a structure in which a part of a third layer made of a silicon oxide layer is removed. Thus, the position for implanting the electrons at the writing time and the position for implanting the electrons to the holes at the writing time can be brought into coincidence with the vicinity of a stepped part of the third layer. <P>COPYRIGHT: (C)2004,JPO</p> |
