| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method of manufacturing a semiconductor device and a plasma treatment apparatus in which a discharge anomaly within a chamber is easily monitored in real time to avoid producing a large amount of defectives. <P>SOLUTION: High-frequency power from a high-frequency power source 14 is applied between a cathode electrode 12 and an anode electrode 15 via a matching-circuit unit 13 and a blocking capacitor 12. Normally, plasma is generated from a fed reaction gas which keeps a glow discharge region, and etching to a semiconductor wafer Waf is carried out. In the case a discharge anomaly occurs during the etching, a high-frequency power matching in the matching-circuit unit 13 encounters the variation of a value to be controlled that is larger than a prescribed range. A voltage-monitor control unit 18 is arranged for detecting the discharge anomaly by the voltage variation that is accompanied by the variation of the value to be controlled. <P>COPYRIGHT: (C)2004,JPO |
