| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a transistor having a polycrystalline silicon film whose crystal grains are large with satisfactory electrical characteristics. <P>SOLUTION: In a transistor formed on an insulating film or an insulating substrate, a part of a semiconductor film (13) is formed as a thick film (13a). The thick-film (13a) part is formed in a source or drain region, and provided with a part projecting toward a channel region when seen as plan view. At annealing, a semiconductor film which is non-meltable in part is left at the thick-film (13a) part, and a polycrystalline silicon film (131) whose crystal grains are large is formed from the projection part of the non-meltable part to at least the channel region. <P>COPYRIGHT: (C)2004,JPO</p> |
