| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having good characteristics and its fabricating method. SOLUTION: The semiconductor device 100 comprises a conductive layer 14 formed on a semiconductor layer 10 through an insulation layer 12. The insulation layer 12 is composed of silicon oxide containing nitrogen atoms. The concentration distribution of nitrogen atom in the insulation layer 12 has a first peak 91 in the vicinity of the interface 12a with the conductive layer 14, and a second peak 92 in the vicinity of the interface 12b with the semiconductor layer 10. Concentration of nitrogen atom at the first peak 91 is higher than that at the second peak 92. COPYRIGHT: (C)2004,JPO
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