| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile ferroelectric memory device in which multi- bit data is stored in one cell, cell layout area is reduced, and of which price competitiveness of a chip can be secured, and method for writing and reading multi-bit data using the device. SOLUTION: This nonvolatile ferroelectric memory device comprises a sense amplifier block constituted form a plurality of sense amplifiers in which multi- level signals are received from main bit lines, compared, and sensed in a multi- bit, and which is commonly used in a plurality of cell array blocks to feed the sensed multi-bit levels back and restore them in a cell, and switching transistors provided one by one per sub-bit line to sense multi-level data values of the unit cell. COPYRIGHT: (C)2004,JPO
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