| 摘要 |
PROBLEM TO BE SOLVED: To improve writing characteristic of a magnetic memory device by providing a magnetic flux concentrator that can efficiently impress a current and a magnetic field generated from a write-in word line of a magnetized memory device upon a storage layer of a TMR element. SOLUTION: A magnetic memory device 1 is provided with the TMR element 13, the write-in word line (first wiring) 11 electrically insulated from the element 13, and a bit line (second wiring) 12 which is electrically connected to the element 13 and three-dimensionally interests the word line 11 with the element 13 in-between. In the memory device 1, the magnetic flux concentrator 51 composed of a layer having high magnetic permeability is provided along both side faces of the word line 11 and the surface of the word line 11 on the opposite side of the TMR element 13, and at least one of the side walls of the concentrator 51 is protruded toward the TMR element 13 from the word line 12. COPYRIGHT: (C)2004,JPO |
