| 摘要 |
PROBLEM TO BE SOLVED: To provide a fabricating method of silicon carbide substrate which provides a substrate adapted its specification of wafer to the structure of a device including the substrate, as well as the substrate fabricated with this method, and a fabricating method of a Schottky barrier diode and a silicon carbide film in a way of saving more money and resources than the present. SOLUTION: A substrate for silicon carbide SOI active layer 5 is pasted on a supporting substrate 2 to perform heating treatment and separated at the layer of ion implantation 6 which is the cutoff region of the crystal lattice to form a silicon carbide SOI substrate 1. The substrate 1 is finished after flattening the surface of separation 4a by means of annealing and polishing. COPYRIGHT: (C)2004,JPO |
