| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the oscillating condition of a laser is changed in time and the width of an oscillation spectrum is increased since a refractive index is wavered in time with a high speed due to noise, contained in an electric current itself or noise caused by the electric current, in a distribution reflective semiconductor laser having a structure wherein the current is directly poured into a diffraction grid for reflecting light by an electrode for controlling reflection. SOLUTION: The distribution reflective semiconductor laser is constituted of an active layer 7, formed in a predetermined area on a semiconductor base board (1), an inactive wave guide passage layer (2) optically connected to the active layer, the diffraction grid (4), provided in at least one part of the inactive wave guide passage area, a clad layer (5), for confining light below the diffraction grid (4), and the electrode (6) for controlling reflection. An insulating layer (12) is formed between the electrode (6) for controlling reflection and the clad layer (5) while an electronic density or a Hall density of the area of diffraction grid is controlled electrostatically by a voltage impressed on the electrode (6) for controlling reflection to change the wave length of oscillation. COPYRIGHT: (C)2004,JPO
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