| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor substrate in which copper or a copper alloy principally comprising copper and tantalum or a compound containing tantalum can be polished continuously with a low load and dishing can be controlled to a low level at the end of pattern polishing. <P>SOLUTION: In the method for manufacturing a semiconductor substrate, polishing is performed under a load not higher than 15 KPa using metal polishing liquid containing polyoxoacid and/or its salt, a nonionic surfactant and water and a polishing pad containing an inorganic filler. <P>COPYRIGHT: (C)2004,JPO</p> |
