SEMICONDUCTOR AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To prevent the deterioration of hFE or the enlargement of an emitter area in a mesa-type bipolar transistor. SOLUTION: An emitter layer 5A is formed on a base layer 4A on a collector layer 3, and ion implantation or ashing is carried out on the surface of the outside region of an emitter electrode 7 in the emitter layer 5A so that a damaged layer 10 is formed. Thus, the high resistance of the surface of the outside region is obtained. COPYRIGHT: (C)2004,JPO