| 摘要 |
PROBLEM TO BE SOLVED: To provide a resist-exfoliating method wherein damage to a substrate is eliminated by exfoliating a resist in a moderate condition, the discharge amount of waste liquor is small, a harmful substance like an organic chemical solution is not used, and an exfoliation speed is high. SOLUTION: In the resist exfoliating method in a photolithography process in the course of a process for manufacturing a liquid crystal substrate, a water film 14 is formed on the surface of a resist 12, ultraviolet rays are irradiated from a light source 16 having a wavelength equivalent to that of a light source for exposing the resist, and the resist is exfoliated and removed. Hydrogen peroxide is added in a range of 0.01-3% to existing water content. In order to prevent the vaporization of the water film formed on the surface of the resist, the ultraviolet rays are irradiated while the water film is covered with quartz glass 18. COPYRIGHT: (C)2004,JPO |
