发明名称 INTERFACE CIRCUIT AND SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To transfer signals/data at high speed with low current consumption according to an active termination system and reduce the area occupied by an output drive circuit. SOLUTION: An output drive circuit (1) is composed of a MOS transistor (13) for driving an output node (14) according to internal read data (/RD), a termination controlling P-channel MOS transistor (11) to be selectively turned to a conductive state according to the internal read data during a non-conductive state of the output driving MOS transistor, and a P-channel MOS transistor (12) turned to the conductive state at least during the inactive state of the output drive circuit (1) for pulling the output node up to a power source voltage level. The data transfer is executed in an open-drain system, and the P-channel MOS transistor is utilized as a terminating transistor. COPYRIGHT: (C)2004,JPO
申请公布号 JP2003283322(A) 申请公布日期 2003.10.03
申请号 JP20020087672 申请日期 2002.03.27
申请人 MITSUBISHI ELECTRIC CORP 发明人 HISAIE SHIGEHIRO
分类号 H03K19/0175;G06F12/00;G06F13/16;H03K19/0185;(IPC1-7):H03K19/017 主分类号 H03K19/0175
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