ORGANIC THIN FILM TRANSISTOR

摘要

PROBLEM TO BE SOLVED: To solve the problem of an organic thin film transistor technology employing a general purpose thin film process, e.g. vacuum deposition, where a semiconductor film is deposited in polycrystalline state that a sufficiently high mobility cannot be attained due to energy barrier in the grain boundary and thereby a sufficiently high source-drain current cannot be attained. SOLUTION: In order to introduce another substance for reducing the energy barrier into the grain boundary part of an organic semiconductor thin film, an organic compound 20 having a polarity opposite to that of an organic semiconductor layer 50 is attached to the semiconductor layer 50 on the side opposite to an insulation layer 60. COPYRIGHT: (C)2004,JPO