| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric capacitor the storage node of which has a high oxidation resistance, and to provide a method of manufacturing the capacitor. SOLUTION: This ferroelectric capacitor for semiconductor device is provided with a lower electrode, a ferroelectric film and an upper electrode which are formed one after another on a conductive film connected to a transistor formed on a semiconductor substrate. In this capacitor, an oxidation preventing film is provided between the conductive film and the lower electrode for preventing the conductive film from being oxidized in a step of heat-treating the ferroelectric film at a high temperature. Since the oxidation resistance of a boundary face between the conductive film used as the storage node and the lower electrode is increased, the forming temperature of the ferroelectric film can be raised and, consequently, a ferroelectric thin film having excellent characteristics can be formed. COPYRIGHT: (C)2004,JPO
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