| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory device the ferroelectric layer of which is hardly reduced. SOLUTION: This ferroelectric memory device 1000 has a memory cell array 100 in which memory cells are arranged in a matrix-like state and a lower electrode 12, an upper electrode 16 arranged in a direction intersecting the lower electrode 12, and the ferroelectric layer 14 which is positioned in at least the intersecting area of the upper and the lower electrodes 16 and 12 are contained. At least on the memory cell array 100, the oxides of the elements contained in the ferroelectric layer 14 are formed as hydrogen barrier films 42 and 44. COPYRIGHT: (C)2004,JPO
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