| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a semiconductor device which can facilitate the manufacturing process of TFTs and decrease the number of apparatuses used to manufacture the TFTs by performing hydrization treatment in a chamber for laser crystallization as well as laser crystallization. SOLUTION: A hydrogen gas is mode to flow to a discharge chamber 56, electric discharge is caused by a radical source, and a hydrogen radical is supplied into a laser irradiation chamber 50 through a radial transport pipe 55. When the hydrogen radical is supplied, a gate valve 53 is in an open state and the hydrogen radical supplied to a cleaning chamber 54 is supplied to a substrate in a laser irradiation chamber 50. While the hydrogen radical is supplied, the laser crystallization is carried out, to instantaneously subjected to hydrogen termination unpaired electron pairs in a polycrystalline silicon film formed by the laser crystallization. COPYRIGHT: (C)2004,JPO
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