| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor device which can minimize cross talk noise caused by a high speed switching semiconductor element in the semiconductor device in which a portion of an external connection terminal arranged in a standing state on a rewiring part electrically connected to an electrode terminal which is formed in the electrode terminal forming surface of the semiconductor element is extended along the rewiring part. <P>SOLUTION: In this semiconductor device 10 in which the external connection terminal 16 formed of a wire 16a is arranged in a standing state on the rewiring part 22 electrically connected to the electrode terminal 14 which is formed in the electrode terminal forming surface of the semiconductor element 12, and at least a portion between the end of the external connection terminal 16 connected to the rewiring part 22 and the other end 36 is bent so as to be extended along the electrode terminal forming surface, the external connection terminal 16 is formed to have a coaxial structure in which a resin layer 16b formed around the circumferential face of the wire 16a is covered with a conductive layer 16c, and the end 36 of the wire 16a is exposed, while the conductive layer 16c is electrically connected to a ground electrode 34 in the semiconductor element 12. <P>COPYRIGHT: (C)2004,JPO |
