| 摘要 |
<P>PROBLEM TO BE SOLVED: To obtain an ohmic contact by speedily alloying only a necessary part without influencing characteristics of a semiconductor element. <P>SOLUTION: A metal layer is formed on a semiconductor transferred to a material with low heat conductivity and interface between the semiconductor and the metal layer is alloyed by irradiation with a laser beam of wavelength which at least one of the semiconductor and metal layer absorbs. The irradiated energy of the laser light is set to 20 to 100 mJ/cm<SP>2</SP>. A material of low heat conductivity is, for example, resin or amorphous silicon. The whole semiconductor is not heated in the alloying by the laser irradiation and only a necessary part is locally heated. Further, the semiconductor is transferred into the material with low heat conductivity, e.g. the resin and then the laser irradiation is carried out to enable alloying at a low temperature, so that the energy of the irradiating laser light can be set low. <P>COPYRIGHT: (C)2004,JPO |
