SEMICONDUCTOR ELEMENT HAVING DOUBLE ISOLATING STRUCTURE AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor element having a double isolating structure, and to provide a method of manufacturing the element.

SOLUTION: The device area of this semiconductor element is composed of a semiconductor substrate and an epitaxial layer covering the whole surface of the substrate and confined by an element isolating structure. The element isolating structure has a double structure of a diffusion isolating layer and a trench separating structure. The diffusion isolating layer is formed in the semiconductor substrate and surrounds the basal face and lower side wall of the device area. The trench separating structure surrounds the upper side wall of the device area in a state where the structure vertically penetrates the epitaxial layer.

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