| 摘要 |
PROBLEM TO BE SOLVED: To form a satisfactory film by removing source gas which is remained in a source gas injector. SOLUTION: An apparatus for manufacturing a semiconductor device is provided with a reaction chamber (124) for performing chemical vapor deposition on a semiconductor wafer within the chamber, a source gas injector (125) for supplying the source gas into the reaction chamber, and vacuum pumps (106, 107) for reducing pressure in the source gas injector as well as in the reaction chamber. COPYRIGHT: (C)2004,JPO
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