SEMICONDUCTOR MEMORY DEVICE

摘要

PROBLEM TO BE SOLVED: To improve a speed of writing operation and reading operation of data in a semiconductor memory device using an MIS transistor as a means for storing charge.

SOLUTION: A DRAM cell 10 stores the charge in a channel of a first transistor 11, transfers the charge by a second transistor 12 and a third transistor 13 and accelerates a data transfer speed by alternately using two routes of a route using a first word line WLa connected to a gate of the second transistor 12 and a first bit line BLa connected to a drain of the second transistor 12 and a route using a first word line WLa connected to a gate of the transistor 12 and the first bit line BLa connected to a drain of the transistor 12.

COPYRIGHT: (C)2004,JPO