发明名称 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
摘要 <p><P>PROBLEM TO BE SOLVED: To efficiently prepare a mask for efficiently carrying out an exposure process in a semiconductor device. <P>SOLUTION: Transfer regions A1 and B1 are provided on the first main surface of a mask substrate 1 of the same mask M1. In the transfer regions A1 and B1, patterns of the different exposure processes in the semiconductor device are arranged. Additionally, on the mask substrate 1, pattern information regions AIA and BIA are prepared. In the pattern information regions AIA and BIA, information such as exposure process names and position coordinates of the transfer regions A1 and B1 is prepared. In exposure treatment, either of the transfer region A1 or B1 of the mask M1 is selected according to the information of the pattern information regions AIA and BIA in the mask M1, and exposure is repeated to a photoresist film on the main surface of a semiconductor wafer. <P>COPYRIGHT: (C)2004,JPO</p>
申请公布号 JP2003282426(A) 申请公布日期 2003.10.03
申请号 JP20020088641 申请日期 2002.03.27
申请人 HITACHI LTD 发明人 OKAMOTO YOSHIHIKO;MOMOSE SATOSHI;KOBAYASHI MASAMICHI;SUKO KAZUYUKI
分类号 G03F1/36;G03F1/38;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/36
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