| 摘要 |
PROBLEM TO BE SOLVED: To ensure a sufficient driving power in a perfect depletion SOI- MOSFET having a thin film SOI layer by improving the roll off characteristics while reducing the parasitic resistance. SOLUTION: A plurality of isolation regions 4 are formed in the SOI layer 2 on an SOI substrate and a gate electrode 5b is formed through a gate insulation film after desired impurities are implanted in the body part of an Si active layer region 2a. Subsequently, the extension part 6 of a source-drain part is formed by implanting impurities in the Si active layer region 2a, and a reverse characteristic layer 7 is formed by the hallow implantation of an impurity having a polarity different from that at the source-drain part. In the hallow implantation, the projection flight is set to reach the inside of a buried oxide film 1b. COPYRIGHT: (C)2004,JPO
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