| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same and also provide a liquid crystal device and method of manufacturing the same in which a manufacturing yield is improved. SOLUTION: The method of manufacturing the semiconductor device comprises a process (a) to form a BPSG layer 20, a process (b) to form a TEOS family oxide silicon layer 30 on the BPSG layer 20 by reacting an organic silane compound and a compound including oxygen, a process (c) to form a resist layer R1 including a predetermined pattern on the TEOS family oxide silicon layer 30, a process (d) to wet-etch at least the TEOS family oxide silicon layer 30 using the resist layer R1 as a mask, and a process (e) to etch the BPSG layer 20 using the resist layer R1 as the mask. COPYRIGHT: (C)2004,JPO
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