| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method of manufacturing the same to improve the step coverage of a common electrode film for electrolyte plating used in a mounting process. SOLUTION: The semiconductor device is characterized by comprising a field oxide film provided to surround an element region on a semiconductor substrate, a gate insulation film provided in the element region, gate electrode wiring provided in the element region and the field oxide film, a high concentration diffusing layer provided in the region where the gate electrode wiring and field oxide film are aligned, an interlayer insulation film provided within the side of the field oxide film region at the end of the semiconductor device region, a contact hole formed in the predetermined area, metal wiring provided within the interlayer insulation film region via the contact hole, and a PV silicon nitride film as a passivation film provided covering the interlayer insulation region within the field oxide film region of the semiconductor device region 15. The semiconductor device is also characterized in that the field oxide film of the end of the semiconductor device region is not overlapped on the under-cut portion of silicon. COPYRIGHT: (C)2004,JPO
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