| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a field effect transistor whose high-frequency characteristics are superior. SOLUTION: This FET 1 is provided with a substrate 2, a buffer layer 3, a first doped layer 4, an undoped layer 5, a second doped layer 6, an undoped layer 7, a cap layer 8, and a surface layer 9. Also, the FET 1 is provided with a source region 11 and a drain region 13 formed in the layers 3 to 8. Furthermore, the FET 11 is provided with intermediate regions 12 and 14 whose impurity concentrations are lower than those of the source region 11 and the drain region 13. A source electrode 31 is formed on the source region 11, and a drain electrode 32 is formed on the drain region 13. Also, an oxide film 21 is formed in a part excluding the source electrode 31 and the drain electrode 32 on the surface layer 9. The oxide film 21 is formed by oxidizing a semiconductor film to be the surface layer 9 from its surface. COPYRIGHT: (C)2004,JPO
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