| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a thin-film semiconductor for preventing dopant from being mixed even if a heterogeneous conductivity- type thin film is deposited using a transport tool. SOLUTION: While a substrate 6 is arranged on the transport tool 7 for retaining the substrate 6, the substrate 6 is carried into a film-forming chamber such as a stocking chamber 1, reaction chambers 2, 3, and 4, and an ejection chamber 5, and p-type, i-type, and n-type layers are formed in the reaction chambers 2, 3, and 4 by an RF plasma CVD (13.56 MHz). Then, the substrate 6 after film deposition is taken out of the transport tool 7 and is subjected to oxygen plasma treatment for oxidizing an adhesion film to a film that adheres to the surface of the transport tool 6 while the substrate 6 is arranged. COPYRIGHT: (C)2004,JPO
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