发明名称 Reduced particulate etching
摘要 A platen for use in a dry etching process for substrate production, the platen having a surface susceptible to chipping and/or particle generation from the dry etching process and a coating applied to at least a portion of the surface for rendering the surface less susceptible to chipping and/or particle generation, the coating comprising a silicon carbide coating
申请公布号 US2003186550(A1) 申请公布日期 2003.10.02
申请号 US20030400310 申请日期 2003.03.27
申请人 LSI LOGIC CORPORATION 发明人 AOKI KATSUMI
分类号 H01J37/32;(IPC1-7):H01L21/302;H01L21/461 主分类号 H01J37/32
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