发明名称 |
Method for producing nitride semiconductor crystal, and nitride semiconductor wafer and nitride semiconductor device |
摘要 |
A method for producing a nitride semiconductor crystal comprising a step (a) for forming fine crystal particles made of a nitride semiconductor on a substrate; a step (b) for forming a nitride semiconductor island structure having a plurality of facets inclined relative to a surface of the substrate with the fine crystal particles as nuclei; and a step (c) for causing the nitride semiconductor island structure to grow in a direction parallel with a surface of the substrate to merge a plurality of the nitride semiconductor island structures with each other, thereby forming a nitride semiconductor crystal layer having a flat surface; the steps (a)-(c) being continuously conducted in the same growing apparatus.
|
申请公布号 |
US2003183160(A1) |
申请公布日期 |
2003.10.02 |
申请号 |
US20030396831 |
申请日期 |
2003.03.26 |
申请人 |
HITACHI CABLE, LTD. |
发明人 |
FUJIKURA HAJIME;IIZUKA KAZUYUKI |
分类号 |
C30B29/38;C30B25/02;C30B25/18;H01L21/20;H01L21/205;H01L21/338;H01L29/201;H01L29/778;H01L29/812;H01L33/12;H01L33/22;H01L33/32;H01L33/40;(IPC1-7):C30B23/00;C30B25/00;C30B28/12;C30B28/14 |
主分类号 |
C30B29/38 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|