发明名称 Thin film capacitor and method of manufacturing the same
摘要 The present invention comprises the steps of (a) forming a first electrode on a substrate via an adhesion enhancing layer, (b) forming a capacitor insulating film containing a laminated film, in which an amorphous dielectric film and a polycrystalline dielectric film are laminated via a wave-like interface, by forming sequentially and successively the amorphous dielectric film and the polycrystalline dielectric film made of same material on the first electrode, (c) forming a second electrode on the capacitor insulating film, and (d) a step of annealing the capacitor insulating film in an oxygen atmosphere.
申请公布号 US2003184952(A1) 申请公布日期 2003.10.02
申请号 US20030365478 申请日期 2003.02.13
申请人 发明人 BANIECKI JOHN DAVID;SHIOGA TAKESHI;KURIHARA KAZUAKI
分类号 H01L27/04;H01G4/06;H01L21/02;H01L21/316;H01L21/822;H01L21/8242;H01L21/8246;H01L27/01;H01L27/105;H01L27/108;(IPC1-7):H01G4/06 主分类号 H01L27/04
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