Electrode assembly for processing a semiconductor substrate and processing apparatus having the same

摘要

An electrode assembly connected to a radio frequency electrical power source transforms process gas into plasma for processing a semiconductor substrate. The electrode assembly includes a first and a second electrode made of aluminum (Al), and a third electrode made of silicon (Si). A plurality of first bolts connect the first electrode to the second electrode, and a plurality of second bolts connect the second electrode with the third electrode. The bolts are either mad of or coated with a metal having an electric conductivity that is no less than that of the aluminum (Al). Furthermore, a conductive film and/or adhesive is interposed between the first electrode and the second electrode. The conductive film includes metal having an electric conductivity more than the aluminum (Al). The conductive film and the bolts reduce the electrical resistance throughout the assembly, and the adhesive fills minute apertures in the surfaces of the electrodes. Accordingly, arc discharges are prevented from occurring within the electrode assembly.