| 摘要 |
A ferroelectric storage device capable of preventing disturbance and its drive method and drive circuit. In the ferroelectric storage device, to at least one selection cell (18a) of a plurality of ferroelectric memory cells (18) formed at cross points between a plurality of word lines (14) and a plurality of bit lines (16), an operation step for performing one of the data read, data rewrite, and data write is repeatedly performed. After the operation step is performed at least once, each of the plurality of ferroelectric memory cells (18) is subjected to disturbance preventing step for applying voltage in a electric field direction not reversing the storage data of each ferroelectric memory cell (18). Thus, voltage is applied to a non-selection cell (18b) in the electric field direction not reversing the storage data at a certain frequency, thereby suppressing deterioration of data. |
